ISO 12406:2010
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
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Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
| Edition | 2010 |
|---|---|
| Published Date | 2010 |
| Published By | International Standardization Organisation |
| Page Count | 13 |