ISO 17560:2014
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Referenced standards
PREVIEW
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
| Edition | 2014 |
|---|---|
| Published Date | 2014 |
| Published By | International Standardization Organisation |
| Page Count | 10 |