Surface chemical analysis — Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation

ISO/TR 16268:2009 specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use. The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 10¹⁶ atoms/cm² to 10¹³ atoms/cm² (i.e. the range of primary interest in semiconductor technology). The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM).

Information is provided on the concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification. Supporting information on ion implantation, ion-implantation dosimetry, wavelength-dispersive X-ray fluorescence spectroscopy and non-certified substitutes for unobtainable SeRMs is provided in four annexes. Sources and magnitudes of uncertainties arising in the certification process are detailed in a fifth annex.

Edition	2009
Published Date	2009
Published By	International Standardization Organisation/Technical Reference
Page Count	19

ISO/TR

ISO/TR 13624-2:2009

ISO/TR 834-2:2009

ISO/TR 1281-2:2008/Cor 1:2009

ISO/TR 10809-1:2009

ISO/TR 11633-1:2009

ISO/TR 19972-1:2009

ISO/TR 12773-1:2009

ISO/TR 1281-1:2008/Cor 1:2009

ISO/TR 24699:2009

ISO/TR 16268:2009

ISO/TR 12859:2009

ISO/TR 13393:2009